Нужны два транзистора:
RJP63K2DPP-M0
Silicon N Channel IGBT
Trench gate and thin wafer technology (G6H-II series)
Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ
High speed switching: tr = 60 ns typ, tf = 200 ns typ.
Low leak current: ICES = 1 A max
Isolated package TO-220FL
или
RJP63F3DPP-M0
Silicon N Channel IGBT
• Trench gate and thin wafer technology (G6H series)
• Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ
• High speed switching tf = 100 ns typ
• Low leak current ICES = 1 μA max
• Isolated package TO-220FL
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Collector to emitter voltage VCES 630 V
Gate to emitter voltage VGES ±30 V
Collector current IC 35 A
Collector peak current ic(peak) Note1 200 A
Collector dissipation PC
Note2 25 W
Junction to case thermal impedance j-c 5 °C/W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW 10 s, duty cycle 1%
2. Tc = 25C
